Last edited by Taubar
Wednesday, April 29, 2020 | History

1 edition of Narrow gap semiconductors found in the catalog.

Narrow gap semiconductors

Narrow gap semiconductors

proceedings of the NATO workshop, Oslo, Norway, 25-27 June 1991.

by

  • 368 Want to read
  • 35 Currently reading

Published by IOP Publishing in Bristol .
Written in English


Edition Notes

Cover title.

SeriesSemiconductor science and technology -- vol.6, No. 12C
ContributionsNorth Atlantic Treaty Organization.
The Physical Object
Pagination136p. :
Number of Pages136
ID Numbers
Open LibraryOL19656568M

A semiconductor can be regarded as an insulator with a narrow band gap, εg. Semiconductors may be divided into two classes: those for which the points in k-space corresponding to the highest occupied valence band state, εv, and the lowest unoccupied conduction band state, εc, lie directly above each other (a direct band gap material); and those . Physics of Narrow Gap Semiconductors Proceedings of the 4th International Conference on Physics of Narrow Gap Semiconductors Held at Linz, Austria, September 14–17, Editors: Gornik, E., Heinrich, H., Palmetzhofer, L. (Eds.) Free Preview. Buy this book eB08 € price for Spain (gross).


Share this book
You might also like
Statistical problems of the Kinsey report on sexual behavior in the human male

Statistical problems of the Kinsey report on sexual behavior in the human male

Wood bridges

Wood bridges

From the apple orchard

From the apple orchard

Transient analysis of alternating current machinery

Transient analysis of alternating current machinery

Up Front

Up Front

Children first

Children first

Dance, music, art, and religion

Dance, music, art, and religion

Structural determinants of the location of rural development institutions in Costa Rica

Structural determinants of the location of rural development institutions in Costa Rica

Fish & seafood made easy

Fish & seafood made easy

Master clock quartz controlled time transmitter

Master clock quartz controlled time transmitter

Explanatory text of the Zanjan quadrangle map I:250,000.

Explanatory text of the Zanjan quadrangle map I:250,000.

Narrow gap semiconductors Download PDF EPUB FB2

Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface Cited by: Narrow Gap Semiconductors 1st Edition by S.

Shen (Editor), D. Tang (Editor), G. Zheng (Editor), & ISBN ISBN Why is ISBN important. ISBN. This bar-code number lets you verify that you're getting exactly the right version or edition of a book.

Narrow-Gap Semiconductors (Springer Tracts in Modern Physics (98)) Softcover reprint of the original 1st ed. EditionCited by: Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials.

Topics covered include impurities and defects, recombination mechanisms, surface 1/5(1). Physics of Narrow Gap Semiconductors (Lecture Notes in Physics) by E. Gornik (Author) ISBN ISBN Why is ISBN important. ISBN.

This bar-code number lets you verify that you're getting exactly the right version or edition of a book. Cited by: Narrow Gap Semiconductors Physics and Applications Book Subtitle Proceedings of the International Summer School Held in Nîmes, France, September 3 – 15, About this book.

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently, these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices.

Narrow-Gap Semiconductors. Authors; Ralf Dornhaus; Günter Nimtz; Burghard Schlicht; Book. Citations; Downloads; Part of the Springer Tracts in Modern Physics book series (STMP, volume 98) Log in to check access. Buy eBook.

USD Narrow-Gap-Halbleiter semiconductor. Bibliographic information. DOI https. At present, HgCdTe is the most widely used variable-gap semiconductor for IR photodetectors. Several reviews and monographs on narrow-gap semiconductors have previously been published. One of the well-known monographs is Narrow-Gap Semiconductors by R.

Dornhaus, G. Nimtz, and B. Schlicht, Springer-Verlag, Berlin (). 15 rows  Narrow-gap semiconductors are semiconducting materials with a band gap that is.

Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics.

Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices.

Continuing the high-quality tradition of this series, Narrow Gap Semiconductors covers all aspects of NGS to offer an authoritative, well-balanced perspective of this evolving. The book also deals with the physics and applications of low-energy phenomena at the infrared and terahertz ranges.

Continuing the high-quality tradition of this series, Narrow Gap Semiconductors covers all aspects of NGS to offer an authoritative, well-balanced perspective of this evolving field. Physics of Narrow Gap Semiconductors Proceedings of the 4th International Conference on Physics of Narrow Gap Semiconductors Held at Linz, Austria, September 14–17, The main band structure features of various narrow bandgap semiconductor families are reviewed.

A qualitative first principle discussion is reported, indicating the impact of relativistic corrections. As an example, a particular emphasis is stressed about the semimetal-semiconductor transition in Cd x Hg 1−x Te alloys. Some techniques used in the characterization of extremely Cited by: 4. The ideal TI is a band insulator where the Fermi level is in the bulk band gap, and any conduction must take place solely through the topological surface states, roughly like a baked potato wrapped in aluminum foil.

The canonical 3D TI materials are narrow band gap semiconductors Bi2 Se 3, Bi 2 Te 3, Sb 2 Te 3. Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features within these rules because of those properties that produce their narrow gaps.

Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow Gap Semiconductors Physics and Applications Proceedings of the International Summer School Held in Nimes, France, September 3 – 15, Search within book.

Front Matter. PDF. General introduction. Leonard Sosnowski. Crystal growth of narrow gap semiconductors theory and techniques. Royer. Pages Bringing together researchers from twenty-five countries, Narrow Gap Semiconductors: Proceedings of the 12th International Conference on Narrow Gap Semiconductors discusses the recent advances and discoveries in the science and technology of narrow gap semiconductors (NGS).

In particular, it explore. Device Physics of Narrow Gap Semiconductors (Microdevices) eBook: Chu, Junhao, Sher, Arden: : Kindle Store1/5(1). The Physics of Semimetals and Narrow Gap Semiconductors by Carter, D.L. [Ed.] and R.T.

[Ed.] Bate: and a great selection of related books, art. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications.

Papers from the International Conference on Narrow-Gap Semiconductors and Related Materials, held in in Gaithersburg, Md. and sponsored by the American Physical Society. Description: xv, pages: illustrations ; 31 cm: Contents: New developments and trends in the physics and technology of narrow-gap semiconductors (R A Stradling).

Genre/Form: Aufsatzsammlung Schmale Energielücke: Additional Physical Format: Online version: Dornhaus, R. (Ralf), Narrow-gap semiconductors. Berlin ; New York. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials.

Topics covered include impurities and defects, recombination Brand: Springer New York. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems.

Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination Brand: Springer New York.

Festkörperprobleme () Narrow bandgap semiconductors Christian Vérié Laboratoire de Magnétisme et de Physique des Solides, C.N. R.S., 1, place A. Briand (92) Meudon-Bellevue (France) Summary: The main band structure features of various narrow bandgap semiconductor families are by: 4.

Narrow Gap Semiconductors contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.

Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. only the fundamental science of narrow-gap semiconductors but also to the technology of infrared optical electronics.

There have been several books published in this field over the past few decades. Ina British scientist, D.R. Lovett, published a book Semimetals and Narrow-Band Gap Semiconductors (Pion Limited, London).

Book Description. Narrow Gap Semiconductors contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.

Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. This book offers clear descriptions of crystal growth and the fundamental structure Read more. Journals & Books; Help; COVID campus closures: see options for getting or retaining Remote Access to subscribed content Download full text in PDF Download.

Share. Export. Advanced. Applied Solid State Science. Volume 4,Pages Narrow Gap Semiconductors Cited by:   The band gap is a very important property of a semiconductor because it determines its color and conductivity.

Many of the applications of semiconductors are related to band gaps: Narrow gap materials (Hg x Cd 1-x Te, VO 2, InSb, Bi 2 Te 3) are used as infrared photodetectors and thermoelectrics (which convert heat to electricity). The defect structure of narrow-gap Hg 1-x Cd x Te (hereinafter – HgCdTe) compounds was intensively investigated both theoretically and experimentally over the past fifty years.

The current status of defect states in these semiconductors are reviewed in numerous papers and monographs (see, e.g., Capper and Garland, ; Chu and Sher, ).HgCdTe crystalline Cited by: 3. Wide-bandgap semiconductors (also known as WBG semiconductors or WBGSs) are semiconductor materials which have a relatively large band gap compared to conventional semiconductors.

Conventional semiconductors like silicon have a bandgap in the range of 1 - electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range of 2 - 4 eV. The use of wide gap semiconductors leads to less thermal quenching of the electroluminescence.

However, O doped Si does lead to state-of-the-art EL devices. Because of the intense current research in SiC and III–V nitride semiconductors, improvements in the crystal quality and in the processing technology of these materials are likely to occur. Bringing together researchers from twenty-five countries, Narrow Gap Semiconductors: Proceedings of the 12th International Conference on Narrow Gap Semiconductors discusses the recent advances and discoveries in the science and technology of narrow gap semiconductors (NGS).

Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials.

Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. We show that a substantial contribution to the dielectric constant ϵ 0 in narrow-gap, zinc-blende semiconductors arises from a small region (about %) of the Brillouin zone around the Г point.

This contribution, calculated from the RPA expression in the 3-band model, dominates the concentration- and pressure-dependence of ϵ 0 in zero-gap or small-gap materials, reducing Cited by: 6.New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics.

The Thirteenth International Conference on Narrow Gap Semiconductors (NGS) was held at the University of Surrey, Guildford, UK in July Narrow gap semiconductors proceedings of the 6th international conference, JulyUniversity of Southampton, UK by Stradling, R.

A. (Richard Anthony), ; Mullin, J. B; International Conference on Narrow-Gap Semiconductors and Related Materials (6th: University of Southhampton)Pages: